1. The problem statement, all variables and given/known data
Consider a pn junction in Si at 300K (other parameters given), with doping NA = 1021/m3 and ND = 1023/m3. Assume all impurities are ionized. On this basis find the Fermi level on each side. From this find the band bending VB and make a sketch of the pn junction.
2. Relevant equations
[itex]N_e = N_C e^{\frac{-(E_G - E_F)}{k_B T}} [/itex]
3. The attempt at a solution
The Fermi energy calculation was fairly straightforward to solve for, since I just used the formula above for both sides and solved for EF. My question is about band bending. What is it and how do I calculate it? I looked through the relevant chapter in my text-book, but I couldn't find any reference to it. Can someone show me how it relates to the Fermi energy that I have already calculated?
Consider a pn junction in Si at 300K (other parameters given), with doping NA = 1021/m3 and ND = 1023/m3. Assume all impurities are ionized. On this basis find the Fermi level on each side. From this find the band bending VB and make a sketch of the pn junction.
2. Relevant equations
[itex]N_e = N_C e^{\frac{-(E_G - E_F)}{k_B T}} [/itex]
3. The attempt at a solution
The Fermi energy calculation was fairly straightforward to solve for, since I just used the formula above for both sides and solved for EF. My question is about band bending. What is it and how do I calculate it? I looked through the relevant chapter in my text-book, but I couldn't find any reference to it. Can someone show me how it relates to the Fermi energy that I have already calculated?
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